Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 26, Issue 4, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2019.2939513
Keywords
First-principle; bivalent bismuth defect center; reaction energy; near-IR luminescence
Categories
Funding
- National Natural Science Foundation of China [61675032]
- National Key Research and Development Program of China [2017YFB0405100, 2018YFB0406601]
- BUPT Excellent Ph.D.
- Students Foundation [CX2018112]
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We present first-principle methods on the conversion of trivalent bismuth center in Bi-doped silica optical fiber. With the increase of Bi-O distance in different member rings, the reaction energy of transition state configurations gradually become larger. The reaction energy of Bi-6MR is greater than that of Bi-4MR, than that of Bi-5MR, respectively. Based on the basis of the time-dependent density functional theory (TDDFT), transition energy levels of bivalent bismuth defect center models are investigated. Our calculations reveal that the similar to 1310 nm luminescence of the second optical communication window is likely caused by bivalent bismuth defect center configuration.
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