Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 7, Pages 1013-1016Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2997565
Keywords
Nanocrystals; CBRAM; SiO2; synaptic properties; multibit; low-power
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Funding
- Programme of State Scholarships Foundation (IKY) by the European Union European Social Fund (ESF)
- Greek National Funds through the Action Entitled Strengthening Human Resources Research Potential via Doctorate Research-2nd Cycle
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In this work we examine the position effect of embedded Pt nanocrystals (NCs) within a conductive bridge resistive switching memory (CBRAM) based on SiO2 which results in self-rectifying properties, low-voltage and more reliable operation. With this material configuration, we derive a large memory window, good spatial and temporal variability, robust pulse endurance and charge retention capabilities. Depending on the applied pulse characteristics we also exhibit low power 4-bit multilevel capabilities along with synaptic properties. The results are compared against a similar device without embedded NCs, gaining insights regarding the spatial confinement of silver nanofilaments by the presence of metallic NCs and its beneficial impact on device operation.
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