Ballistic Transport in High-Performance and Low-Power Sub-5 nm Two-Dimensional ZrNBr MOSFETs

Here, the electronic properties and ballistic transport properties of two-dimensional (2D) ZrNBr are comprehensively investigated by the nonequilibrium Green's function coupled with density functional theory. 2D ZrNBr has a wide direct band gap of 1.82 eV with the highest mobility of 8700 cm(2) V-1 s(-1). Both the n- and p-type 2D ZrNBr MOSFETs with 5-nm channel length hold the on-currents above 2300 mu A/mu m for high-performance devices and an on/off ratio exceeding 10(6) for low-power applications, which is of great value for the design of complementary circuits in 2D electronics. In addition, the energy-delay products of the single 2D ZrNBr MOSFETs and the 32-bit Arithmetic Logic Unit show more potential compared to other 2D materials and CMOS proposals. Thus, this work broadens a promising path towards beyond-silicon electronic systems.