Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 6, Pages 828-831Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2988074
Keywords
GaN; HEMTs; microwave; buffer-free 23 heterostructure
Categories
Funding
- Swedish Governmental Agency for Innovation Systems (VINNOVA) [2016-05190]
- Linkoping University
- Chalmers University
- ASEA Brown Boveri, ABB Inc. (ABB)
- Epiluvac
- Ericsson
- Swedish Defence Materiel Administration (FMV)
- Gotmic
- On Semiconductor
- Saab AB
- SweGaN
- United Monolithic Semiconductors (UMS)
- VINNOVA (Ultra-Compact AESA Technology for Autonomous Aircrafts) [2017-04870]
- European Union's Horizon 2020 Research and Innovation Programme (CoolHEMT) [823260]
- Vinnova [2016-05190] Funding Source: Vinnova
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High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure without a conventional thick doped buffer. The HEMT is fabricated on a high-quality 0.25 mu m unintentional doped GaN layer grown directly on a transmorphic epitaxially grown AlN nucleation layer. This approach allows the AlN-nucleation layer to act as a back-barrier, limiting short channel effects and removing buffer leakage. The devices with the 'buffer-free' heterostructure show competitive DC and RF characteristics, as benchmarked against the devices made on a commercial Fe-doped epi-wafer. Peak transconductances of 500 mS/mm and a maximum saturated drain current of similar to 1 A/mm are obtained. An extrinsic f(T) of 70 GHz and f(max) of 130 GHz are achieved for transistors with a gate length of 100 nm. Pulsed-IV measurements reveal a lower current slump and a smaller knee walkout. The dynamic IV performance translates to an output power of 4.1 W/mm, as measured with active load-pull at 3 GHz. These devices suggest that the 'buffer-free' concept may offer an alternative route for high frequency GaN HEMTs with less electron trapping effects.
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