Regrowth-Free GaN-Based Complementary Logic on a Si Substrate

This paper demonstrates a complementary logic circuit (an inverter) on a GaN-on-Si platform without the use of regrowth technology. Both n-channel and p-channel GaN transistors are monolithically integrated on a GaN/AlGaN/GaN double heterostructure. N-channel FETs showenhancement-mode(E-mode) operationwith a threshold voltage around 0.2 V, ON-OFF current ratio of 10(7) and R-ON of 6 Omega center dot mm, while the p-channel FETs show E-mode operation with Vth of-1 V, ON-OFF current ratio of 104 and R-ON of 2.3 k Omega center dot mm. Complementary logic inverters fabricated with this technology yield a record maximum voltage gain of similar to 27 V/V at an input voltage of 0.59 V with V-DD = 5 V. Excellent transfer characteristic shave been obtained up to 300 degrees C operating temperatures, which demonstrates the suitability of this technology for low-power high-temperature electronic applications.