Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 6, Pages 936-939Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2988247
Keywords
2D material; LIF neuron; MoS2; SNN; TSM
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Funding
- NSF CAREER Award [NSF-ECCS-1845331]
- BAE Systems [1020180]
- National Research Council of Science & Technology (NST), Republic of Korea [C030350] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this work, we use a two-terminal 2D MoS2-based memristive device to emulate an artificial neuron. The Au/MoS2/Ag device exhibits volatile resistance switching characteristics with a low threshold voltage and a high ON-OFF ratio of 10(6), originating from an Ag diffusion-based filamentary process. The leaky integrate-and-fire neuron implemented with this device successfully emulates the key characteristics of a biological neuron.
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