Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 8, Pages 1209-1212Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.3001922
Keywords
Thin film transistors; Detectors; X-ray detectors; Spatial resolution; Glass; Substrates; Sensitivity; Scintillating silicate glass (SSG); indirect-conversion X-ray detector; backside illumination; active pixel sensor; 3-D photosensitive thin-film transistor; high sensitivity; high resolution
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Funding
- National Key Research and Development Program of China [2016YFA0202002]
- National Science Foundation of China [6147403]
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A conventional large-area indirect-conversion X-ray detector usually adopts front side illumination (FSI) of a scintillator atop a photodiode-integrated thin-film transistor (TFT) array. This work however proposes a backside illuminated (BSI) three-dimensional dual-gate photosensitive a-Si:H TFT (3-D DGTFT) on a scintillating glass substrate, aiming for indirect-conversion X-ray detection. It not only improves the sensitivity with a 3-D photosensitive TFT as an active pixel sensor, but also enhances the resolution and photon utilization by reducing photon scattering and optical crosstalk. Backside illumination of 3-D photosensitive TFT-integrated scintillating glass therefore provides an alternative approach to large-area indirect-conversion X-ray imaging.
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