Journal
DIAMOND AND RELATED MATERIALS
Volume 106, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2020.107869
Keywords
Diamond; Ruthenium; C-TLM; Ohmic contact; XPS; Barrier height
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Funding
- National Key RAMP
- D Program of China [2017YFB0402800, 2017YFB0402802]
- National Natural Science Foundation of China [61605155, 61627812, 61705176, 61804122, 11474048]
- China Postdoctoral Science Foundation [2019M653637, 2019M660256]
- Dongguan Introduction Program of Leading Innovative and Entrepreneurial Talents
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The characteristics of ruthenium (Ru) contact to boron doped diamond (BDD) have been investigated before and after annealing. The properties of as-deposited Ru contacts to BDD showed non-linear trend. Interestingly, the contact properties of Ru/BDD exhibited ohmic contact behavior after post-annealing at 500 degrees C. The specific contact resistance (rho(c)) of Ru/BDD was 2.3 x 10(-4) Omega.cm(2) after annealing at 500 degrees C for 20 min in the argon (Ar) ambient. The contact barrier height was 0.075 eV +/- 0.14 eV after annealing at 500 degrees C, evaluated by X-ray photoelectron spectroscopy (XPS).
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