Journal
CURRENT APPLIED PHYSICS
Volume 20, Issue 12, Pages 1447-1452Publisher
ELSEVIER
DOI: 10.1016/j.cap.2020.07.004
Keywords
Lead free; Bi0.5Na0.5TiO3; Transverse piezoelectrics; Thin film; Cantilever
Funding
- Priority Research Centers Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2019R1A6A1A11053838]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2020R1I1A3068422]
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Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O-3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO2/SiO2/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi0.5Na0.5)(Ti0.995Mn0.005)O-3 thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (P-r) of 16 mu C/cm(2) was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-mu m-thick BNTMn-0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO2/SiO2/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient (e(31)*) of 2.43 C/m(2).
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