Journal
CRYSTAL RESEARCH AND TECHNOLOGY
Volume 55, Issue 8, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/crat.202000044
Keywords
control engineering; lumped parameter model; mathematical modeling; parameter estimation; silicon crystal growth
Categories
Funding
- Leibniz Association
Ask authors/readers for more resources
In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model-based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available