4.7 Article

Introducing sulfur vacancies and in-plane SnS2/SnO2 heterojunction in SnS2 nanosheets to promote photocatalytic activity

Journal

CHINESE CHEMICAL LETTERS
Volume 31, Issue 10, Pages 2809-2813

Publisher

ELSEVIER SCIENCE INC
DOI: 10.1016/j.cclet.2020.07.052

Keywords

Sulfur vacancies; In-plane heterojunction; SnS2 Nanosheets; Ball-milling; Charge carrier separation

Funding

  1. National Key Research And Development Program [2016YFB0901600]
  2. CAS Center for Excellence in Superconducting Electronics
  3. Key Research Program of Chinese Academy of Sciences [QYZDJ-SSWJSC013, KGZD-EW-T06]
  4. National Natural Science Foundation of China [21871008, 21801247]
  5. Jingdezhen Science and Technology Bureau [20192GYZD008-21]
  6. Science Foundation for Youth Scholar of State Key Laboratory of High Performance Ceramics and Superfine Microstructures [SKL 201804]

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Due to the relatively sluggish charge carrier separation in metal sulfides, the photocatalytic activity of them is still far lower than expected. Herein, sulfur vacancies and in-plane SnS2/SnO2 heterojunction were successfully introduced into the SnS2 nanosheets through high energy ball-milling. These defective structures were studied by the electron paramagnetic resonance, Raman spectra, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscope analyses. The sulfur vacancies and in-plane heterojunctions strongly accelerate the separation of photoexcited electron-hole pairs, as confirmed by the photoluminescence emission spectra and time-resolved photoluminescence decay spectra. The introduction of sulfur vacancies and in-plane heterojunction in SnS2 nanosheets results in roughly six times higher photodegrading rate for methyl orange and four times higher photocatalytic reduction rate of Cr6+ than those of pure SnS2 nanosheets. (C) 2020 Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences. Published by Elsevier B.V. All rights reserved.

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