Journal
CERAMICS INTERNATIONAL
Volume 46, Issue 16, Pages 25017-25023Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2020.06.287
Keywords
Mg2+ - doped BiFeO3; Colossal dielectric permittivity; Density functional theory
Categories
Funding
- Research Network NANOTEC (RNN) program of the National Nanotechnology Center (NANOTEC), NSTDA
- Ministry of Higher Education, Science, Research and Innovation (MHESI)
- Khon Kaen University, Thailand
- Science Achievement Scholarship of Thailand (SAST)
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Nanocrystalline powders of BiFe1-xMgxO3 (x = 0, 0.05, and 0.10) were prepared via a co - precipitation method. This produced a dense ceramic microstructure when sintering the compacted nanocrystalline powders at 800 degrees C for 3 h. A main phase of BiFeO3 with a small number of impurity phases was confirmed to exist in the sintered ceramics. High epsilon' values of 10(-3)10(5) in the temperature range of 200-473 K were obtained. Dielectric relaxation behavior was studied over a wide temperature range. The low - and high - temperature dielectric relaxations originated from electron hopping between Fe2+<-> Fe3+ and the interfacial polarization associated with the long-range motion of free charge carriers, respectively. To describe the dielectric properties of the Mg2+-doped BiFeO3 ceramics, theoretical calculations were performed to investigate the most preferable formation of complex defects. It was found that the dopant concentration had an effect on the defect shapes and dielectric properties.
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