Journal
CARBON
Volume 169, Issue -, Pages 440-445Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2020.07.079
Keywords
Diamond; Oxygen terminal; Energetic band; Fermi level; Surface states; Pinning effect
Funding
- National Science Fund for Distinguished Young Scholars [51625201]
- National Key Research and Development Program of China [2016YFE0201600]
- National Natural Science Foundation of China [51702066, 51911530123]
- Key Project of the National Natural Science Foundation of China [U1809210]
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Oxygen-terminated type Ila (OT-Ila) diamond with oxygen suspended in the form of a ketone bond (C=O) was synthesized via acid treatment. The Fermi level at 3.23 eV below the conduction band minimum for the OT-Ila diamond surface was measured experimentally, while that at 0.97 eV for the bulk was calculated theoretically. An acceptor model of the surface states was developed, employed, and combined with an upward-bending band diagram to compensate this energetic band difference between the surface and bulk of OT-Ila diamond. A Schottky barrier height of 3.15 eV between gold and the OT-Ila diamond was also measured. In addition, we also inferred the downward-bending band diagram for the surface of oxygen-terminated p-type diamond doped with boron. This work complements the semiconductor theory concerning diamond and will be helpful to analyze and improve the performance of devices based on oxygen-terminated diamond. (C) 2020 Elsevier Ltd. All rights reserved.
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