4.5 Article

Analysis of Effect of Zn(O,S) Buffer Layer Properties on CZTS Solar Cell Performance Using AMPS

Journal

CHINESE PHYSICS LETTERS
Volume 33, Issue 10, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/33/10/107801

Keywords

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Funding

  1. Guiding Project of Strategic Emerging Industries of Fujian Provincial Department of Science and Technology [2015H0010]
  2. Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure of Shanghai Institute of Ceramics of Chinese Academy of Sciences [SKL201404SIC]
  3. Natural Science Foundation of Fujian Province [2016J01751]

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The Cu2ZnSnS4 (CZTS)-based solar cell is numerically simulated by a one-dimensional solar cell simulation software analysis of microelectronic and photonic structures (AMPS-1D). The device structure used in the simulation is Al/ZnO: Al/nZn(O, S)/pCZTS/Mo. The primary motivation of this simulation work is to optimize the composition in the ZnO1-xSx buffer layer, which would yield higher conversion efficiency. By varying S/(S+O) ratio.., the conduction band offset (CBO) at CZTS/Zn(O, S) interface can range from -0.23 eV to 1.06 eV if the full range of the ratio is considered. The optimal CBO of 0.23 eV can be achieved when the ZnO1-xSx buffer has an S/(S+O) ratio of 0.6. The solar cell efficiency first increases with increasing sulfur content and then decreases abruptly for x > 0.6, which reaches the highest value of 17.55% by our proposed optimal sulfur content x = 0.6. Our results provide guidance in dealing with the ZnO1-xSx buffer layer deposition for high efficiency CZTS solar cells.

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