Journal
CHINESE PHYSICS B
Volume 25, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/25/2/027102
Keywords
nitride materials; p-type GaN; resistivity; carbon concentration
Categories
Funding
- National Natural Science Foundation of China [61474110, 61377020, 61376089, 61223005, 61176126]
- National Natural Science Fund for Distinguished Young Scholars, China [60925017]
- One Hundred Person Project of the Chinese Academy of Sciences
- Basic Research Project of Jiangsu Province, China [BK20130362]
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Two series of p-GaN films grown at different temperatures are obtained by metal organic chemical vapor deposition (MOCVD). And the different variation behaviors of resistivity with growth condition for high-temperature(HT)-grown and low-temperature(LT)-grown p-GaN films are investigated. It is found that the resistivity of HT-grown p-GaN film is nearly unchanged when the NH3 flow rate or reactor pressure increases. However, it decreases largely for LT-grown p-GaN film. These different variations may be attributed to the fact that carbon impurities are easy to incorporate into p-GaN film when the growth temperature is low. It results in a relatively high carbon concentration in LT-grown p-GaN film compared with HT-grown one. Therefore, carbon concentration is more sensitive to the growth condition in these samples, ultimately, leading to the different variation behaviors of resistivity for HT-and LT-grown ones.
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