Journal
APPLIED PHYSICS LETTERS
Volume 117, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0014945
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Funding
- NSF [EFMA1433378]
- Penn State 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP) under NSF [DMR-1539916]
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Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of alpha-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs), were prepared and measured from room to liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of electrical polarization and an electric field-induced metallic state in alpha-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of potential applications of semiconducting ferroelectrics.
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