4.6 Article

High quality epitaxial thin films and exchange bias of antiferromagnetic Dirac semimetal FeSn

Journal

APPLIED PHYSICS LETTERS
Volume 117, Issue 3, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/5.0011497

Keywords

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Funding

  1. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-76SF00515]

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FeSn is a topological semimetal (TSM) and kagome antiferromagnet (AFM) composed of alternating Fe3Sn kagome planes and honeycomb Sn planes. This unique structure gives rise to exotic features in the band structures such as the coexistence of Dirac cones and flatbands near the Fermi level, fully spin-polarized 2D surface Dirac fermions, and the ability to open a large gap in the Dirac cone by reorienting the Neel vector. In this work, we report the synthesis of high-quality epitaxial (0001) FeSn films by magnetron sputtering. Using FeSn/Py heterostructures, we show a large exchange bias effect that reaches an exchange field of 220Oe at 5K, providing unambiguous evidence of antiferromagnetism and strong interlayer exchange coupling in our films. Field cycling studies show steep initial training effects, highlighting the complex magnetic interactions and anisotropy. Importantly, our work provides a simple, alternative means to fabricate FeSn films and heterostructures, making it easier to explore the topological physics of AFM TSMs and develop FeSn-based spintronics. Published under license by AIP Publishing.

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