Related references
Note: Only part of the references are listed.High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate Dielectric
Jun Yang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Field-Dependent Mobility Enhancement and Contact Resistance in a-IGZO TFTs
Guangwei Xu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Dielectric breakdown of alumina thin films produced by pulsed direct current magnetron sputtering
Benjamin V. T. Hanby et al.
THIN SOLID FILMS (2018)
Energy-dependent relaxation time in quaternary amorphous oxide semiconductors probed by gated Hall effect measurements
Josephine Socratous et al.
PHYSICAL REVIEW B (2017)
Ionic Metal-Oxide TFTs for Integrated Switching Applications
Michael L. Schuette et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Amorphous semiconductor mobility limits
Kevin A. Stewart et al.
JOURNAL OF NON-CRYSTALLINE SOLIDS (2016)
The 2016 oxide electronic materials and oxide interfaces roadmap
M. Lorenz et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO
I. I. Fishchuk et al.
PHYSICAL REVIEW B (2016)
Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors Part I: Long-Channel Devices
Fabrizio Torricelli et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Present status of amorphous In-Ga-Zn-O thin-film transistors
Toshio Kamiya et al.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2010)
Material characteristics and applications of transparent amorphous oxide semiconductors
Toshio Kamiya et al.
NPG ASIA MATERIALS (2010)
Microwave ZnO thin-film transistors
Burhan Bayraktaroglu et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Electrical Modeling of Thin-Film Transistors
D. Hong et al.
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES (2007)
Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
A Takagi et al.
THIN SOLID FILMS (2005)
A closed-form DC model for long-channel thin-film transistors with gate voltage-dependent mobility characteristics
RL Hoffman
SOLID-STATE ELECTRONICS (2005)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)
A review of recent MOSFET threshold voltage extraction methods
A Ortiz-Conde et al.
MICROELECTRONICS RELIABILITY (2002)
Share Paper
