4.6 Article

Lasing up to 380K in a sublimated GaN nanowire

Journal

APPLIED PHYSICS LETTERS
Volume 116, Issue 22, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/5.0004771

Keywords

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Funding

  1. JSPS KAKENHI [15H05735]
  2. French National Research Agency (ANR) through the Project NAPOLI [ANR-18-CE24-0022]

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We report on GaN nanowire lasers fabricated by selective-area sublimation, and we show that sublimated GaN nanowires can exhibit ultraviolet lasing action under optical pumping beyond room temperature, up to 380K. We study by microphotoluminescence the temperature-dependent behavior of single nanowire lasers between 7K and 380K and extract a characteristic temperature of T=126K. We finally present a statistical study of the maximum lasing temperature in individual sublimated GaN nanowires and use it to assess the performance of the selective-area sublimation method for nanowire-based lasing applications.

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