Journal
APPLIED PHYSICS LETTERS
Volume 116, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0004771
Keywords
-
Categories
Funding
- JSPS KAKENHI [15H05735]
- French National Research Agency (ANR) through the Project NAPOLI [ANR-18-CE24-0022]
Ask authors/readers for more resources
We report on GaN nanowire lasers fabricated by selective-area sublimation, and we show that sublimated GaN nanowires can exhibit ultraviolet lasing action under optical pumping beyond room temperature, up to 380K. We study by microphotoluminescence the temperature-dependent behavior of single nanowire lasers between 7K and 380K and extract a characteristic temperature of T=126K. We finally present a statistical study of the maximum lasing temperature in individual sublimated GaN nanowires and use it to assess the performance of the selective-area sublimation method for nanowire-based lasing applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available