4.5 Article

Source engineering for bilayer tunnel field-effect transistor with hetero tunnel junction: thickness and impurity concentration

Journal

APPLIED PHYSICS EXPRESS
Volume 13, Issue 7, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/ab9875

Keywords

TFET; bilayer; source; thickness; impurity concentration; thin films

Funding

  1. Japan Science and Technology Agency CREST [JPMJCR1332]

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We have investigated the impacts of source layer thickness, source impurity concentration and channel thickness in a bilayer tunneling field-effect transistor with a thin-film hetero tunneling junction on electrical characteristics. Device simulation has revealed that thinning of the source layer significantly degrades on-state current (I-on) due to non-uniform band-to-band tunneling over the tunneling junction, while channel layer thinning is effective for increasingI(on). On the other hand, source/channel impurity concentrations of around 3 x 10(18) cm(-3)are found to be optimal for highI(on), highI(on)/I(off)and suppression of transfer characteristic shifts with changingV(d).

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