Journal
APPLIED PHYSICS EXPRESS
Volume 13, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/ab9875
Keywords
TFET; bilayer; source; thickness; impurity concentration; thin films
Categories
Funding
- Japan Science and Technology Agency CREST [JPMJCR1332]
Ask authors/readers for more resources
We have investigated the impacts of source layer thickness, source impurity concentration and channel thickness in a bilayer tunneling field-effect transistor with a thin-film hetero tunneling junction on electrical characteristics. Device simulation has revealed that thinning of the source layer significantly degrades on-state current (I-on) due to non-uniform band-to-band tunneling over the tunneling junction, while channel layer thinning is effective for increasingI(on). On the other hand, source/channel impurity concentrations of around 3 x 10(18) cm(-3)are found to be optimal for highI(on), highI(on)/I(off)and suppression of transfer characteristic shifts with changingV(d).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available