Journal
APPLIED OPTICS
Volume 59, Issue 20, Pages 6231-6236Publisher
OPTICAL SOC AMER
DOI: 10.1364/AO.396999
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Funding
- National Natural Science Foundation of China [61704055, 61874044]
- Program of Shanghai Science and Technology Committee [17142202500]
- Strategic Priority Research Program of ECNU of China
- Japan Society for the Promotion of Science [18H01469]
- Grants-in-Aid for Scientific Research [18H01469] Funding Source: KAKEN
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Electron tunneling dynamics in asymmetric coupled triple InGaN/GaN quantum wells (ACQWs) with different well thicknesses of 3.0 nm (QW1), 2.5 nm (QW2), and 2.0 nm (QW3) were quantitatively investigated based on the time- and spectrally-resolved photoluminescence (PL) measurements and the rate-equation theory. Under weak excitation, only the emission peak of the widest well was observed at room temperature due to the effective electron tunneling from a wide to a narrow well, while all three emission peaks of the distinct wells were obtained at a high excitation level. The PL-intensity ratios of the wells in the initial transient spectra differed from those in the time-integrated spectra. With a set of rate equations and the experimental results of PL ratios and decay times, a 2 ns tunneling time from QW2 to QW1 was extracted and was decreased to 0.5 ns with increasing excitation, while the one from QW3 to QW2 was extracted to be similar to 170 ps. The extracted tunneling times are in good qualitative agreement with the data from the exponential fitting of the PL decay traces, which can be interpreted by the energy mismatches between relevant energy levels in the ACQWs. These results provide not only a better understanding of the carrier recombination and tunneling processes in the ACQW systems but also a useful guidance for high-performance ACQW-based optoelectronic and functional devices. (C) 2020 Optical Society of America
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