Fluorinated p-n type copolyfluorene as polymer electret for stable nonvolatile organic transistor memory device

In this study, a kind of fluorinated copolyfluorene, named poly[(4-(octyloxy)-9,9-diphenylfluorene-2,7-diyl)-alt-(2,3,5,6-tetrafluoro-1,4-phenylene)] (PODPF-TFP), is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[(4-(octyloxy)-9,9-diphenylfluorene-2,7-diyl)-alt-(p-phenylene)] (PODPF-P), deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor (OFET) memory devices are fabricated with PODPF-P/PODPFTFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable I (on)/I (off) ratio during a retention time of 10(4) s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.