Journal
CHINESE JOURNAL OF POLYMER SCIENCE
Volume 34, Issue 10, Pages 1183-1195Publisher
SPRINGER
DOI: 10.1007/s10118-016-1826-0
Keywords
p-n copolyfluorenes; Fluorine atom; Direct aromatization; Polymer dielectric; Transistor memory
Categories
Funding
- National Natural Science Funds for Excellent Young Scholar [21322402]
- National Natural Science Foundation of China [21274064, 61475074, 21504041, 61136003]
- University of Jiangsu Province Natural Science Foundation Project [14KJB510027]
- Natural Science Foundation of Jiangsu Province [BM2012010]
- Synergetic Innovation Center for Organic Electronics and Information Displays, Natural Science of the Education Committee of Jiangsu Province [15KJB430019]
- Jiangsu Planned Projects for Postdoctoral Research Funds [1501019B]
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In this study, a kind of fluorinated copolyfluorene, named poly[(4-(octyloxy)-9,9-diphenylfluorene-2,7-diyl)-alt-(2,3,5,6-tetrafluoro-1,4-phenylene)] (PODPF-TFP), is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[(4-(octyloxy)-9,9-diphenylfluorene-2,7-diyl)-alt-(p-phenylene)] (PODPF-P), deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor (OFET) memory devices are fabricated with PODPF-P/PODPFTFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable I (on)/I (off) ratio during a retention time of 10(4) s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.
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