Journal
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume 59, Issue 39, Pages 17214-17218Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.202005406
Keywords
ab-initio calculations; chemical vapor deposition; gas-phase reactions; graphene; structure elucidation
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Funding
- Beijing Municipal Science & Technology Commission [Z181100004818001]
- National Basic Research Program of China [2016YFA0200101]
- National Natural Science Foundation of China [21525310, 51520105003]
- China Post-doctoral Foundation [7131705619]
- Beijing National Laboratory for Molecular Sciences [BNLMS- CXTD-202001]
- Beijing Graphene Institute
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Chemical vapor deposition (CVD) has become a promising approach for the industrial production of graphene films with appealing controllability and uniformity. However, in the conventional hot-wall CVD system, CVD-derived graphene films suffer from surface contamination originating from the gas-phase reaction during the high-temperature growth. Shown here is that the cold-wall CVD system is capable of suppressing the gas-phase reaction, and achieves the superclean growth of graphene films in a controllable manner. The as-received superclean graphene film, exhibiting improved optical and electrical properties, was proven to be an ideal candidate material used as transparent electrodes and substrate for epitaxial growth. This study provides a new promising choice for industrial production of high-quality graphene films, and the finding about the engineering of the gas-phase reaction, which is usually overlooked, will be instructive for future research on CVD growth of graphene.
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