Journal
ADVANCED MATERIALS
Volume 32, Issue 37, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202003240
Keywords
antiferromagnetic semiconductors; magnetotransport; negative magnetoresistance; SQUID magnetometry; van der Waals materials
Categories
Funding
- Programmable Quantum Materials, an Energy Frontier Research Center - U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), [DE-SC0019443]
- NSF [DGE 16-44869]
- Arnold O. Beckman Fellowship in Chemical Sciences
- Division of Chemistry (CHE), National Science Foundation [NSF/CHE-1834750]
- Division of Materials Research (DMR), National Science Foundation [NSF/CHE-1834750]
- U.S. DOE [DE-AC02-06CH11357]
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The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However, current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here the magnetic and electronic properties of CrSBr are reported, an air-stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Neel temperature,T-N = 132 +/- 1 K, CrSBr adopts an A-type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is Delta(E) = 1.5 +/- 0.2 eV with a corresponding PL peak centered at 1.25 +/- 0.07 eV. Using magnetotransport measurements, strong coupling between magnetic order and transport properties in CrSBr is demonstrated, leading to a large negative magnetoresistance response that is unique among vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin-based electronics.
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