Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 30, Issue 32, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202002939
Keywords
field-effect transistors; lateral heterojunctions; nanodevices; Schottky diodes; transition-metal disulfides
Categories
Funding
- NSFC [11774079, 61774059, U1704136]
- Scientific and Technological Innovation Program of Henan Province's Universities [20HASTIT026]
- Young Backbone Teacher Program of Henan Province's Higher Education [2017GGJS043]
- Science Foundation for the Excellent Youth Scholars of Henan Province (2020 year)
- Henan Overseas Expertise Introduction Center for Discipline Innovation [CXJD2019005]
- Science Foundation for the Excellent Youth Scholars of HNU [2016YQ05]
- HPCC of HNU
- US DOE-BES [DE-FG02-05ER46237]
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The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS(2)heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The lateral VS2|MoS(2)heterojunction diodes show a perfect rectifying effect and are promising for the applications of Schottky diodes. A large spin-polarization ratio is observed for the A-type device and pure spin-mediated current is then realized. The gate voltage significantly tunes the current and rectification ratio of their field-effect transistors. In addition, they all demonstrate a sensitive photoresponse to blue light, and could be used as photodetector and photovoltaic device. Moreover, they generate an effective thermally driven current when a temperature gratitude appears between the two terminals, suggesting them as potential thermoelectric materials. Hence, the lateral VS2|MoS(2)heterojunctions show a multifunctional nature and have various potential applications in spintronics, optoelectronics, and spin caloritronics.
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