Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 30, Issue 31, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202001483
Keywords
chemical vapor deposition; dielectric substrates; direct growth; graphene; light emitting diodes
Categories
Funding
- National Basic Research Program of China [2016YFA0200103, 2018YFB0406703, 2016YFA0300804]
- National Natural Science Foundation of China [51520105003, 61974139, 61527814, 61427901, 11974023, 51672007]
- Key RAMP
- D Program of Guangdong Province [2018B030327001, 2018B010109009]
- Beijing Natural Science Foundation [4182063]
- Institute for Basic Science, South Korea [IBS-R019-D1]
- 2011 Program Peking-Tsinghua-IOP Collaborative Innovation Center for Quantum Matter
- National Research Foundation of Korea [IBS-R019-D1-2020-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Direct growth of graphene films on functional substrates is immensely beneficial for the large-scale applications of graphene by avoiding the transfer-induced issues. Notably, the selective growth of patterned graphene will further boost the development of graphene-based devices. Here, the direct growth of patterned graphene on thec-plane of nanopatterned sapphire substrate (NPSS) is realized and the superiority of the patterned graphene for high-performance ultraviolet light-emitting diodes (UV-LED) is demonstrated. As confirmed by density functional theory calculations and analog simulations, compared to the concaver-plane the flatc-plane of NPSS is characterized by a lower active barrier for methane decomposition and carbon species diffusion, as well as a greater supply of carbon precursor for graphene growth. The synthesized patterned graphene on thec-plane of NPSS is verified to be monolayer and high quality. The patterned graphene enables the selective and well-aligned nucleation of aluminium nitride (AlN) to promote rapid epitaxial lateral overgrowth of single-crystal AlN films with low dislocation density. Consequently, the fabricated UV-LED demonstrates high luminescence intensity and stability. The method is suitable for obtaining various patterned graphene by substrate design, which will allow for greater progress in the cutting-edge applications of graphene.
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