Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 30, Issue 40, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202001834
Keywords
halide perovskites; ion migration; operational stability; perovskite light-emitting diodes; thin films
Categories
Funding
- National Natural Science Foundation of China [61875161, 61904145]
- International Cooperation by Shaanxi [2015KW-008]
- China Postdoctoral Science Foundation [2016M590947, 2018M643652]
- Fundamental Research Funds for the Central Universities [xjj2016031]
- Natural Science Basic Research Plan of Shaanxi Province [2017JM6064]
- Scientific Research Plan Projects of Shaanxi Education Department [17JK0700]
- Innovation Capability Support Program of Shaanxi [2018PT-28, 2019PT-05]
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Stability issue is one of the major concerns that limit emergent perovskite light-emitting diodes (PeLEDs) techniques. Generally, ion migration is considered as the most important origin of PeLEDs degradation. In this work, an all-inorganic device architecture, LiF/perovskite/LiF/ZnS/ZnSe, is proposed to address this imperative problem. The inorganic (Cs1-xRbx)(1-)(y)K(y)PbBr(3)perovskite is optimized with achieving a photoluminescence quantum yield of 67%. Depth profile analysis of X-ray photoelectron spectroscopy indicates that the LiF/perovskite/LiF structure and the ZnS/ZnSe cascade electron transport layers significantly suppress the electric-field-induced ion migrations of the perovskite layers, and impede the diffusion of metallic atoms from cathode into perovskites. The as-prepared PeLEDs display excellent shelf stability (maintaining 90% of the initial external quantum efficiency [EQE] after 264 h) and operational stability (half-lifetime of about 255 h at an initial luminance of 120 cd m(-2)). The devices also exhibit a maximum brightness of 15 6155 cd m(-2)and an EQE of 11.05%.
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