Journal
ACS NANO
Volume 14, Issue 7, Pages 9011-9020Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c03940
Keywords
NiTe2; chemical vapor deposition; environmental stability; conductivity; hydrogen evolution reaction
Categories
Funding
- National Key Research and Development Program of China [2018YFA0703700]
- National Natural Science Foundation of China [51991340, 51991344, 51925201, 51861135201]
- Beijing Natural Science Foundation [2192021]
- National University of Singapore
- MOE for a Tier 2 grant Atomic scale understanding and optimization of defects in 2D materials [MOE2017-T2-2-139]
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Two-dimensional (2D) metallic transition metal dichalcogenides (MTMDCs) supply a versatile platform for investigating newfangled physical issues and developing potential applications in electronics/spintronics/electrocatalysis. Among these, NiTe2 (a type-II Dirac semimetal) possesses a Dirac point near its Fermi level. However, as-prepared 21) MTMDCs are mostly environmentally unstable, and little attention has been paid to synthesizing such materials. Herein, a general chemical vapor deposition (CVD) approach has been designed to prepare thickness-tunable and large-domain (similar to 1.15 mm) 1T-NiTe, on an atomically flat mica substrate. Significantly, ultrahigh conductivity (similar to 1.15 x 10(6) S m(-1)) of CVD-synthesized 1T-NiTe2 and high catalytic activity in pH-universal hydrogen evolution reaction have been uncovered. More interestingly, the 2D 1T-NiTe2 maintains robust environmental stability for more than one year and even after a variety of harsh treatments. These results hereby fill an existing research gap in synthesizing environmentally stable 2D MTMDCs, making fundamental progress in developing 2D MTMDC-based devices/catalysts.
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