Journal
ACS NANO
Volume 14, Issue 6, Pages 7593-7601Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c03469
Keywords
two-dimensional molybdenum dichalcogenides; chemical vapor deposition; oxide inhibitors; controllable growth; kinetics control
Categories
Funding
- National Natural Science Foundation of China [51776094, 91963129]
- Basic Research Project of Science and Technology Plan of Shenzhen [JCYJ20180504165655180]
- Guangdong High-level Personnel of Special Support ProgramOutstanding young scholar in science and technology innovation [2015TQ01C543]
- Guangdong Natural Science Funds for Distinguished Young Scholars [2015A030306044]
- Hong Kong Research Grants Council [C6021-14E]
- Foundation of Shenzhen Science and Technology Innovation Committee [JCYJ20180302174026262]
- National Student Innovation Training Program of China [201914325003]
- Special Funds for the Cultivation of Guangdong College Students' Scientific and Technological Innovation [pdjh2020c0009]
- Southern University of Science and Technology (SUSTech)
- Material Characterization and Preparation Center-Pico Center at SUSTech from Presidential fund and Development and Reform Commission of Shenzhen Municipality
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Though chemical vapor deposition (CVD) methods have been widely used in the growth of two-dimensional transition-metal dichalcogenides (2D TMDCs), the controllable fabrication of 2D TMDCs is yet hard to achieve because of the great challenge of concisely controlling the release of precursors vapor, one of the most critical growth kinetic factors. To solve this important issue, here we report the utilization of oxide inhibitors covering Mo source during CVD reactions to manipulate the release of Mo vapor. In contrast to the lack of capability of conventional CVD methods, 2D molybdenum dichalcogenide (MoX2, X = S, Se, Te) monolayers were successfully fabricated through the proposed CVD protocol with the oxide-inhibitorthis way, despite the fact that only separated MoTe2 flakes were prepared, both MoS2 (continuous but dotted) monolayer films at the scale of centimeter were obtained. The comprehensive understanding and precise control of the reaction kinetics for improved assisted growth (OIAG) strategy. In (continuous and clean) and MoSe2 presented OIAG method enables a growth of 2D MoX2.
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