Solution-Processed Sb2Se3 on TiO2 Thin Films Toward Oxidation-and Moisture-Resistant, Self-Powered Photodetectors

Semiconductor-sensitized TiO2 thin films with long-term air stability are attractive for optoelectronic devices and applications. Herein, we demonstrate the potential of the TiO2 thin film (similar to 800 nm in thickness) sensitized with a Sb2Se3 layer (similar to 350 nm) grown from solution spin coating and processed by annealing recrystallization at 300 degrees C for high-performance optical detection. The type-H band alignment, p-Sb2Se3/n-TiO2 heterojunction, and narrow band gap of Sb2Se3 (similar to 1.2S eV) endow the film photodetector with a large photo-current, high switching stability and on/off ratio (>10(3)), and fast response speeds (<20 ms) under the broadband visible-near-infrared irradiation in a zero-bias self-powered photovoltaic mode. In particular, the photodetector shows notable resistance to oxidation and moisture for long-term operation, which is linked to the modest surface oxidation (Sb-O) of Sb2Se3, as verified by X-ray photoelectron spectroscopy. The first-principles calculations show that a low and medium concentration of oxygen substitution for Se (O-Se) and oxygen interstitial (O-i) with negative formation energies can lead to such a moderate surface oxidation but do not generate impurity states or just introduce a shallow-level acceptor state in the electronic structures of Sb2Se3 without degrading its optoelectronic performance. Our theoretical results offer a rational explanation for the air-stable and oxidation/moisture-resistant characteristics in moderately oxidized Sb2Se3 and may shed light on the surface oxidation-property relationship studies of other nonoxide semiconductor-sensitized devices.