Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 32, Pages 36688-36694Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c07548
Keywords
thermal atomic layer deposition; nanocrystalline layered boron nitride; transfer-free deposition; graphene field effect transistors; insulating substrate; transferred CVD graphene
Funding
- South West Academy of Nanoelectronics (SWAN) center, a Semiconductor Research Corporation program
- Nanoelectronics Research Initiative (NRI)
- NIST
- Kookmin University (KMU)
- Texas Instruments
- Brain Pool Program through the National Research Foundation (NRF) - Ministry of Science and ICT (MSIT) of Korea [2019H1D3A2A01101691]
- Global Research and Development Center Program through NRF - MSIT [2018K1A4A3A01064272]
- Brain Pool Program through NRF - MSIT [2019H1D3A2A01061938]
- National Research Foundation of Korea [2019H1D3A2A01101691] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Hexagonal boron nitride (h-BN) has been considered a promising dielectric for two-dimensional (2D) material-based electronics due to its atomically smooth and charge-free interface with an in-plane lattice constant similar to that of graphene. Here, we report atomic layer deposition of boron nitride (ALD-BN) using BCl3 and NH3 precursors directly on thermal SiO2 substrates at a relatively low temperature of 600 degrees C. The films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and transmission electron microscopy wherein the uniform, atomically smooth, and nanocrystalline layered-BN thin film growth is observed. The growth rate is similar to 0.042 nm/cycle at 600 degrees C, a temperature significantly lower than that of h-BN grown by chemical vapor deposition. The dielectric properties of the ALD-BN measured from Metal Oxide Semiconductor Capacitors are comparable with that of SiO2. Moreover, the ALD-BN exhibits a 2-fold increase in carrier mobility of graphene field effect transistors (G-FETs/ALD-BN/SiO2) due to the lower surface charge density and inert surface of ALD-BN in comparison to that of G-FETs fabricated on bare SiO2. Therefore, this work suggests that the transfer-free deposition of ALD-BN on SiO2 may be a promising candidate as a substrate for high performance graphene devices.
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