Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 31, Pages 35175-35180Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c05537
Keywords
organic-inorganic halide perovskite; quantum dot; super yellow; light-emitting transistors; zinc-oxynitride
Funding
- Basic Science Research Program, through the National Research Foundation of Korea
- Ministry of Science and ICT [2019R1A2C1087653]
- Ministry of Trade, Industry and Energy (MOTIE) [10051954]
- Korea Display Research Corporation (KDRC) support program
- Korea Evaluation Institute of Industrial Technology (KEIT) [10051954] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The class of organic-inorganic lead halides with perovskite crystal structures has recently emerged as promising materials for a variety of practical optoelectronic applications. In particular, hybrid halide perovskite quantum dots possess excellent intrinsic optoelectronic properties such as high color purity (full width at half-maximum of 24.59 nm) and photoluminescence quantum yields (92.7%). In this work, we demonstrate the use of perovskite quantum dot materials as an emissive layer of hybrid light-emitting transistors. To investigate the working mechanism of perovskite quantum dots in light-emitting transistors, we investigated the electrical and optical characteristics under both p-channel and n-channel operation. Using these materials, we have achieved perovskite quantum dot light-emitting transistors with high electron mobilities of up to 12.06 cm(2).V-1 s(-1), high brightness of up to 1.41 x 10(4) cd m(-2), and enhanced external quantum efficiencies of up to 1.79% operating at a source-drain potential of 40 V.
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