Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 28, Pages 31382-31391Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c05476
Keywords
MoS2; InP@ZnS QDs; phototransistors; self-powered photodetectors; artificial synapses
Funding
- 111 Project of China [D17017]
- National Natural Science Foundation of China [21703017, 11604024, 51672103, 6140414020102]
- Developing Project of Science and Technology of Jilin Province [20180519017JH]
- International Science and Technology Cooperation Project of Jilin Province [20190701029GH]
- Project of Education Department of Jilin Province [JJKH20190551KJ, JJKH20200730KJ, JJKH20170241KJ]
- China Postdoctoral Science Foundation [2019M651181]
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Various hybrid zero-dimensional/two-dimensional (0D/2D) systems have been developed to fabricate phototransistors with better performance compared to two-dimensional (2D) layered materials as well as broaden potential applications. Herein, we integrated environment-friendly InP@ZnS core-shell QDs with high efficiency of light absorption and light-emitting properties with bilayer MoS2 for the realization of 0D/2D mixed-dimensional phototransistors. Interdigitated (IDT) electrodes with Pt-patterned arrays, acting as light collectors as well as plasmonic resonators, can further enhance light harvesting from the InP@ZnS-MoS2 hybrid phototransistors, contributing to achieving a photoresponsivity as high as 1374 A.W-1. Moreover, thanks to the asymmetric Pt/MoS2 Schottky junction at the source/drain contact, a self-powered characteristic with an ultrafast speed of 21.5 mu s was achieved, which is among the best performances for 2D layered material-based phototransistors. In terms of these features, we demonstrated the artificial synapse network with short-time plasticity based on the self-powered photodetection device. Our work reveals the great potential of 0D/2D hybrid phototransistors for high-response, ultrafact-speed, and self-powered photodetectors coupled with artificial neuromorphic function.
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