High-performance Nonvolatile Organic Photoelectronic Transistor Memory Based on Bulk Heterojunction Structure

Depending on the storage mechanisms, organic field-effect transistor (OFET) memory is usually divided into floating gate memory, ferroelectric memory, and polymer-electret-based memory. In this work, a new type of nonvolatile OFET memory is proposed by simply blending a p-type semiconductor and a n-type semiconductor without using an extra trapping layer. The results show that the memory window can be effectively modulated by the dopant concentration of the n-type semiconductor. With the addition of a 5% n-type semiconductor, blending devices exhibit a large memory window up to 57.7 V, an ON/OFF current ratio (I-ON/I-OFF) approximate to 10(5), and a charge retention time of over 10 years, which is comparable or even better than those of most of the traditional OFET memories. The discontinuous n-type semiconductor is set as a charge-trapping center for charge storage due to the quantum well-like organic heterojunctions. The generalization of this method is also investigated in other organic systems. Moreover, the blend devices are also applied to optical memory and show multilevel optical storage, which are further scaled up to 8 x 8 array to map up two-dimensional (2D) optical images with long-term retention and reprogramming characteristic. The results reveal that the novel system design has great potential application in the field of digital image memory and photoelectronic system.