Journal
ACS OMEGA
Volume 5, Issue 21, Pages 12385-12390Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsomega.0c01139
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Funding
- Nebraska Public Power District through the Nebraska Center for Energy Sciences Research at the University of Nebraska-Lincoln, NCESR [19-SE-2018]
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BaTiS3 is a semiconductor with a small bandgap of similar to 0.5 eV and strong transport anisotropy caused primarily by structural anisotropy; it contains well-separated octahedral columns along the [0001] direction and low lattice thermal conductivity, appealing for thermoelectric applications. Here, we evaluate the prospect of BaTiS3 as a thermoelectric material by using the linearized electron and phonon Boltzmann transport theory based on the first-principles density functional band structure calculations. We find sizable values of the key thermoelectric parameters, such as the maximum power factor PF = 928 mu W K-2 and the maximum figure of merit ZT = 0.48 for an electron-doped sample and PF = 74 mu W K-2 and ZT = 0.17 for a hole-doped sample at room temperature, and a small doping level of +/- 0.25e per unit cell. The increase in temperature yields an increase in both the power factor and the figure of merit, reaching large values of PF = 3078 mu W K-2 and ZT = 0.77 for the electron-doped sample and PF = 650 mu W K-2 and ZT = 0.62 for the hole-doped sample at 800 K. Our results elucidate the promise of BaTiS3 as a material for the thermoelectric power generator.
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