Journal
ACS OMEGA
Volume 5, Issue 12, Pages 6358-6365Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsomega.9b03755
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Funding
- National Natural Science Foundation of China [U1505252, 61306075]
- Natural Science Foundation of Fujian Province [2015H0050]
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Metallurgical silicon was studied for photocatalytic H-2 evolution activity. It has been found that metallurgical silicon with large particle size (above 800 nm) possesses poor photocatalytic activity because of the deteriorating photoelectric performance of the low-purity silicon. After size reduction (around 400 nm) and metal nanoparticle decoration, the photocatalytic performance was significantly enhanced to 1003.3 mu mol.g(-1). h(-1). However, the photocatalytic performance of the Cu-, Ag-, and Pt-decorated silicon is degraded with the increase of time. Moreover, the degradation is independent of the metal. Electrochemical test and X-ray photoelectron spectroscopy suggested that the Mott-Schottky effect in the metal-silicon contact should be responsible for the degradation. After forming a heterojunction by vulcanizing the Ag-decorated silicon, the degradation was suppressed. Upgradation of the metal-silicon contact to form a heterojunction was a promising way to suppress the degradation and retain the high photocatalytic performance.
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