Journal
PHYSICAL REVIEW MATERIALS
Volume 4, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.4.043401
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Funding
- Netherlands Organisation for Scientific Research NWO [718.016.002]
- European Union's Horizon 2020 research and innovation program under Marie Sklodowska-Curie Grant [794954]
- Marie Curie Actions (MSCA) [794954] Funding Source: Marie Curie Actions (MSCA)
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Controlling the crystalline structure of hafnium zirconate and its epitaxial relationship to a semiconducting electrode has high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using pulsed laser deposition, a phase-pure, ultrathin film of HfZrO4 is grown epitaxially on a GaN(0001)/Si(111) template. Since standard microscopy techniques do not allow us to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast scanning transmission electron microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with x-ray diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated.
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