Journal
NATIONAL SCIENCE REVIEW
Volume 7, Issue 8, Pages 1280-1287Publisher
OXFORD UNIV PRESS
DOI: 10.1093/nsr/nwaa089
Keywords
quantum Hall effect without Landau levels; Chern insulator; topological matter; topological quantum states; high Chern number; high temperature
Categories
Funding
- National Key Research and Development Program of China [2018YFA0305600, 2017YFA0303300, 2018YFA0307100]
- National Natural Science Foundation of China [11888101, 11774008, 51788104, 11874035, 21975140, U1832218]
- Beijing Natural Science Foundation [Z180010]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB28000000]
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The quantum Hall effect (QHE) with quantized Hall resistance of h/nu e(2) started the research on topological quantum states and laid the foundation of topology in physics. Since then, Haldane proposed the QHE without Landau levels, showing nonzero Chern number vertical bar C vertical bar = 1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realize high Chern numbers (C> 1). Here, we report the experimental discovery of high-Chern-number QHE (C = 2) without Landau levels and C = 1 Chern insulator state displaying a nearly quantized Hall resistance plateau above the Neel temperature in MnBi2Te4 devices. Our observations provide a new perspective on topological matter and open new avenues for exploration of exotic topological quantum states and topological phase transitions at higher temperatures.
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