Fabrication and characterization of Schottky barrier diodes on rutile TiO2

Schottky barrier diodes (SBDs) were fabricated by depositing Pd, Pt or Ni on single crystal, conductiven-type rutile TiO(2)using e-beam evaporation. As-grown and nominally undoped rutile TiO(2)single crystals are semi-insulating, and were heat-treated in forming gas flow, N(2)flow or H(2)gas to obtain conductiven-type crystals displaying electrical conductivities in the range of(0.5-8)x10(-2)Omega(-1)cm(-1). Additionally, SBDs were deposited on Nb-doped conductiven-type rutile TiO(2)with a conductivity of around 0.25 Omega(-1)cm(-1). Generally, SBDs displaying a rectification of up to eight orders of magnitude were obtained, when comparing the current under reverse and forward bias. The extracted ideality factors were in the range of1.1-4.0