Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET

The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatures (25-125 degrees C). A similar temperature dependence of threshold voltage (V-TH) and subthreshold swing (SS) is observed for both devices. However, effective mobility (mu(eff)) shows significant differences of temperature dependence between GAA NW-FET and FinFET at a high gate effective field. At weak N-inv (= 5 x 10(12) cm(2)/V.s), both GAA NW-FET and FinFET are mainly limited by phonon scattering in mu(eff). On the other hand, at strong N-inv (= 1.5 x 10(13) cm(2)/V.s), GAA NW-FET shows 10 times higher d mu(eff)/dT and 1.6 times smaller mobility degradation coefficient (alpha) than FinFET. GAA NW-FET is less limited by surface roughness scattering, but FinFET is relatively more limited by surface roughness scattering in carrier transport.