Journal
APL MATERIALS
Volume 8, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5142491
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Funding
- UK Engineering and Physical Sciences Research Council (EPSRC) [EP/M011682/1, EP/M010589/1]
- EPSRC Impact Acceleration Account Follow-On Fund of the University of Cambridge
- EPSRC [EP/M011682/1, EP/M010589/1] Funding Source: UKRI
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Porosification of nitride semiconductors provides a new paradigm for advanced engineering of the properties of optoelectronic materials. Electrochemical etching creates porosity in doped layers while leaving undoped layers undamaged, allowing the realization of complex three-dimensional porous nanostructures, potentially offering a wide range of functionalities, such as in-distributed Bragg reflectors. Porous/non-porous multilayers can be formed by etching the whole, as-grown wafers uniformly in one simple process, without any additional processing steps. The etch penetrates from the top down through the undoped layers, leaving them almost untouched. Here, atomic-resolution electron microscopy is used to show that the etchant accesses the doped layers via nanometer-scale channels that form at dislocation cores and transport the etchant and etch products to and from the doped layer, respectively. Results on AlGaN and non-polar GaN multilayers indicate that the same mechanism is operating, suggesting that this approach may be applicable in a range of materials.
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