Journal
ADVANCED SCIENCE
Volume 7, Issue 9, Pages -Publisher
WILEY
DOI: 10.1002/advs.201903076
Keywords
gate-controlled spintronics; gate tunable magnetism; magnetic domains; magnetic semiconductors; room temperature ferromagnetism; vanadium-doped tungsten diselenide
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Funding
- National Research Foundation of Korea [IBS-R011-D1-2020-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition are reported. Ferromagnetic order is manifested using magnetic force microscopy up to 360 K, while retaining high on/off current ratio of approximate to 10(5) at 0.1% V-doping concentration. The V-substitution to W sites keeps a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission electron microscopy. More importantly, the ferromagnetic order is clearly modulated by applying a back-gate bias. The findings open new opportunities for using 2D transition metal dichalcogenides for future spintronics.
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