Journal
ADVANCED ELECTRONIC MATERIALS
Volume 6, Issue 6, Pages -Publisher
WILEY
DOI: 10.1002/aelm.202000284
Keywords
2D materials; InI flakes; optics; photodetection; space-confined growth
Funding
- National Natural Science Foundation of China [21825103, 51802103, 11774239]
- Hubei Provincial Natural Science Foundation of China [2019CFA002]
- Fundamental Research Funds for the Central University [2019kfyXMBZ018]
- Analytical and Testing Center of Huazhong University of Science and Technology
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Layered InI has a great potential in optoelectronic applications due to its direct wide tunable bandgap. However, there is no single report about its 2D synthesis. Here, the growth of high-quality and ultrathin InI flake (as thin as 8 nm) is reported via space-confined physical vapor deposition. Impressively, an InI flake-based photodetector exhibits an ultralow off-state current of approximate to 4.2 x 10(-12) A, high on/off photocurrent ratio of 10(4), excellent detectivity of 4.2 x 10(12) Jones, a high-speed response time of 10 ms, as well as excellent effective quantum efficiency of 1600%, suggesting its promising applications in optoelectronics.
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