Journal
ADVANCED ELECTRONIC MATERIALS
Volume 6, Issue 5, Pages -Publisher
WILEY
DOI: 10.1002/aelm.202000008
Keywords
layer-dependent transport; palladium diselenide; plasma etching; thickness modulation
Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2017R1C1B5015940, 2018R1D1A1B0741867]
- National Research Foundation of Korea [2017R1C1B5015940] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The thickness-modulated phase transition from semi-metallic (bulk) to semiconductor (a few layers) is the most unique property of pentagonal palladium diselenide (PdSe2). Thus, precise thickness tailoring is essential to fully utilize its unique thickness-dependent property for exotic device applications. Here, tunable current transport in PdSe2 based field-effect transistors (FETs) enabled by layer-by-layer thinning of PdSe2 using mild SF6:N-2 plasma is presented. With this top-down plasma-etching method, the PdSe2 layer thickness can be precisely modulated without structural degradation, which paves the way to realize the complete potential of PdSe2-based devices. By modifying the plasma power and exposure time, an atomic layer precision etching rate of 0.4 nm min(-1) can be achieved. Atomic-force microscopy, Raman spectroscopy, and secondary ion mass spectrometry confirm the uniform and complete removal of top layers of PdSe2 flake over a large area without affecting remaining bottom layers. Electrical characterization of current transport in plasma-thinned PdSe2 FETs reveals excellent layer-dependent conductivity similar to pristine PdSe2 FETs. This simple but highly scalable and controllable plasma-etching technique provides a promising way to fabricate PdSe2 devices based on lateral heterostructures composed of different thicknesses PdSe2 flakes to exploit strongly thickness-dependent electronic structures.
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