4.8 Article

Theoretical Studies of Oxygen Reactivity of Free-Standing and Supported Boron-Doped Graphene

Journal

CHEMSUSCHEM
Volume 9, Issue 10, Pages 1061-1077

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/cssc.201501439

Keywords

boron; density functional theory; graphene; metal interfaces; oxygen reactivity

Funding

  1. Italian MIUR through the national grant Futuro in ricerca [2012 RBFR128BEC]
  2. CINECA supercomputing center [LI03p_CBC4FC, IscrB_CMGEC4FC]

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Graphene inertness towards chemical reactivity can be considered as an accepted postulate by the research community. This limit has been recently overcome by chemically and physically modifying graphene through non-metal doping or interfacing with acceptor/donor materials (metals or semiconductors). As a result, outstanding performances as catalytic, electrocatalytic, and photocatalytic material have been observed. In this critical Review we report computational work performed, by our group, on the reactivity of free-standing, metal-and semiconductor-supported B-doped graphene towards oxygen, which is at the basis of extremely important energy-related chemical processes, such as the oxygen reduction reaction. It appears that a combination of doping and interfacing approaches for the activation of graphene can open unconventional and unprecedented reaction paths, thus boosting the potential of modified graphene in many chemical applications.

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