Journal
PHYSICAL REVIEW APPLIED
Volume 13, Issue 5, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.13.054058
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Funding
- U.S. Air Force Office of Scientific Research [FA9550-16-1-0203]
- U.S. Department of Energy, Office of Science, Basic Energy Sciences program [DE-SC0019467]
- MEXT Element Strategy Initiative To Form Core Research Centers [JPMXP0112101001]
- Core Research for Evolutional Science and Technology program, Japan Science and Technology Agency [JPMJCR15F3]
- U.S. Department of Energy (DOE) [DE-SC0019467] Funding Source: U.S. Department of Energy (DOE)
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We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2. The devices are operated with gates above and below the WSe2 layer to accumulate a hole gas, which for some devices is then selectively depleted to define the dot. Temperature dependence of conductance in the Coulomb-blockade regime is consistent with transport through a single level, and excited-state transport through the dots is observed at temperatures up to 10 K. For adjacent charge states of a bilayer-WSe2 dot, the magnetic field dependence of excited-state energies is used to estimate g factors between 0.8 and 2.4 for different states. These devices provide a platform to evaluate valley-spin states in monolayer and bilayer WSe2 for application as qubits.
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