Journal
PHYSICAL REVIEW APPLIED
Volume 13, Issue 5, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.13.054017
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Funding
- National Excellence Program of Quantum-Coherent Materials Project (Hungarian NKFIH Grant) [KKP129866]
- European Union QuantERA Q-Magine Project [127889]
- QuantERA Nanospin Project [127902]
- European Union Horizon 2020 Quantum Technology Flagship project ASTERIQS [820394]
- National Quantum Technology Program [2017-1.2.1NKP-2017-00001]
- Swedish Research Council [VR 2016-04068]
- Swedish Energy Agency [43611-1]
- Knut and Alice Wallenberg Foundation [KAW 2018.0071]
- European Union Horizon 2020 project QuanTELCO [862721]
- Japan Society for the Promotion of Science [JSPS KAKENHI 17H01056, JSPS KAKENHI 18H03770]
- U.S. Department of Energy, Office of Science [DE-SC0019174]
- Swedish National Infrastructure for Computing at the National Supercomputer Centre [SNIC 2019/3667, LiU-2015-00017-60]
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Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum-technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H-SiC. We apply density-functional theory beyond the Born-Oppenheimer approximation to describe the temperature-dependent mixing of electronic excited states assisted by phonons. We obtain a polaronic gap of around 5 and 22 meV for the V1 and V2 centers, respectively, which results in a significant difference in the temperature-dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.
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