Journal
PHYSICAL REVIEW APPLIED
Volume 13, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.13.034068
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Funding
- German Research Foundation (DFG) [BO 3140/4-1, 289786932]
- Federal Ministry of Education and Research [FKZ: 13N14778]
- QuantERA ERA-NET Cofund in Quantum Technologies within European Union's Horizon 2020 Programme
- cluster of excellence Matter and light for quantum computing (ML4Q)
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Valley splitting is a key feature of silicon-based spin qubits. Quantum dots in Si/SixGe1-x heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 mu eV in a gate-defined single quantum dot, hosted in molecular-beam-epitaxy-grown Si-28/SixGe1-x. The valley splitting is monotonically and reproducibly tunable up to 15% by gate voltages, originating from a 6-nm lateral displacement of the quantum dot. We observe static spin relaxation times T-1 > 1 s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, T-1 is limited by the valley hotspot and by phonon noise coupling to intrinsic and artificial spin-orbit coupling, including phonon bottlenecking.
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