Journal
PHYSICAL REVIEW APPLIED
Volume 13, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.13.034033
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Funding
- Hundred Talents Program from Chinese Academy of Sciences
- National Natural Science Foundation of China [11974390]
- National Key R&D Program of China [2019YFA0308500, 2017YFA0303604]
- Key Research Program of Frontier Sciences of the Chinese Academy of Sciences [QYZDJ-SSW-SLH020]
- Scientific User Facilities Division, BES, U.S. DOE
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Materials with large perpendicular magnetic anisotropy (PMA) are candidates for spintronic devices, such as magnetic random-access memory, etc., due to their stable magnetic reference states. Because of shape anisotropy, the magnetic easy axis of oxide thin films favors in-plane orientation. In this Paper, we demonstrate a convenient means to control the magnetic anisotropy of SrRuO3 (SRO) ultrathin layers from in-plane to out-of-plane by capping with nonmagnetic materials. Tuning the anisotropy is achieved by imposition of symmetry mismatch at the interface-induced structural transition of SRO with suppressed octahedral tilt. These results suggest a potential direction for engineering magnetic oxide thin films with flexible tunable PMA using capping-layer-induced dissimilar symmetry.
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