Journal
NANOMATERIALS
Volume 10, Issue 4, Pages -Publisher
MDPI
DOI: 10.3390/nano10040711
Keywords
2D materials; photodetectors; oxidation; TiS3; TiO2; Raman spectroscopy; DFT GW
Categories
Funding
- European Commission under the Graphene Flagship [CNECTICT-604391]
- Netherlands Organisation for Scientific Research (NWO) [680-50-1515]
- European Union [793318]
- Spanish Ministerio de Economia y Competitividad [FIS2016-79464-P]
- Grupo Consolidado UPV/EHU del Gobierno Vasco [IT578-13]
- MINECO-FEDER [MAT2015-65203-R]
- MEXT, Japan
- CREST [JPMJCR15F3]
- Marie Curie Actions (MSCA) [793318] Funding Source: Marie Curie Actions (MSCA)
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In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS3), a layered semicon-ductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectron-ic properties and its direct bandgap of 1.1 eV. Heating TiS3 in air above 300 degrees C gradually converts it into TiO2, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of indi-vidual TiS3 nanoribbons and its influence on the optoelectronic properties of TiS3-based photodetec-tors. We observe a step-wise change in the cut-off wavelength from its pristine value similar to 1000 nm to 450 nm after subjecting the TiS3 devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO2-xSx) when in-creasing the amount of oxygen and reducing the amount of sulfur.
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